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EC4A01TF

更新时间： 2024-11-21 10:44:11
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
5页 34K
描述
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, ECSP1006-4-F, 4 PIN

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EC4A01TF 数据手册

 浏览型号EC4A01TF的Datasheet PDF文件第2页浏览型号EC4A01TF的Datasheet PDF文件第3页浏览型号EC4A01TF的Datasheet PDF文件第4页浏览型号EC4A01TF的Datasheet PDF文件第5页 
Ordering number : EN8715  
N-Channel Silicon Junction FET  
EC4A01TF  
Condenser Microphone Applications  
Features  
• Ultrasmall (1006 size), thin (0.35mm) leadless package.  
• Especially suited for use in condenser microphone for audio equipments and telephones.  
• Excellent voltage characteristic.  
• Excellent transient characteristic.  
• Adoption of FBET process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
GDO  
--20  
10  
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
(off)  
G
V
GS  
V
V
V
V
V
=5V, I =1µA  
--0.2  
140*  
0.5  
--0.6  
--1.2  
DS  
DS  
DS  
DS  
DS  
D
Drain Current  
I
=5V, V =0V  
GS  
350*  
µA  
mS  
pF  
pF  
DSS  
yfs  
Forward Transfer Admittance  
Input Capacitance  
=5V, V =0V, f=1kHz  
GS  
1.0  
3.5  
Ciss  
Crss  
=5V, V =0V, f=1MHz  
GS  
Reverse Transfer Capacitance  
=5V, V =0V, f=1MHz  
GS  
0.65  
[Ta=25°C, V =4.5V, R =1kΩ, Cin=15pF, See Specified Test Circuit]  
CC  
L
Voltage Gain  
G
f=1kHz, V =10mV  
IN  
--3.0  
--0.9  
dB  
dB  
dB  
V
Reduced Voltage Characteristics  
Frequency Characteristics  
∆G  
VV  
f=1kHz, V =10mV, V =4.5→1.5V  
--3.5  
--1.0  
IN  
CC  
∆Gvf  
f=1kHz to 110Hz  
Continued on next page.  
* : The EC4A01TF is classified by I  
as follws : (unit : µA)  
DSS  
Rank  
4
5
I
140 to 240  
210 to 350  
DSS  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D2005GB MS IM TB-00001964  
No.8715-1/5  
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