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EBS25UC8APMA-7A PDF预览

EBS25UC8APMA-7A

更新时间: 2024-09-25 22:11:11
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
14页 145K
描述
256MB SDRAM Micro DIMM

EBS25UC8APMA-7A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM144,20
针数:144Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.92访问模式:SINGLE BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N144内存密度:2147483648 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:64
湿度敏感等级:1功能数量:1
端口数量:1端子数量:144
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM144,20
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified刷新周期:8192
自我刷新:YES最大待机电流:0.024 A
子类别:DRAMs最大压摆率:2 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EBS25UC8APMA-7A 数据手册

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DATA SHEET  
256MB SDRAM Micro DIMM  
EBS25UC8APMA (32M words × 64 bits, 1 bank)  
Description  
Features  
The EBS25UC8APMA is 32M words × 64 bits, 1 bank  
Synchronous Dynamic RAM Micro Dual In-line Memory  
Module (Micro DIMM), mounted 8 pieces of 256M bits  
SDRAM sealed in µBGA package. This module  
provides high density and large quantities of memory in  
a small space without utilizing the surface mounting  
technology. Decoupling capacitors are mounted on  
power supply line for noise reduction.  
Fully compatible with 8 bytes Micro DIMM: JEDEC  
standard outline  
144-pin socket type micro dual in line memory  
module (Micro DIMM)  
PCB height: 30.00mm (1.18inch )  
Lead pitch: 0.50mm  
3.3V power supply  
Clock frequency: 100MHz/133MHz (max.)  
LVTTL interface  
Note : Do not push the cover or drop the modules in  
order to protect from mechanical defects, which  
would be electrical defects.  
Data bus width: × 64 non-ECC  
Single pulsed /RAS  
4 Banks can operates simultaneously and  
independently  
Burst read/write operation and burst read/single write  
operation capability  
Programmable burst length (BL): 1, 2, 4, 8, Full page  
2 variations of burst sequence  
Sequential  
Interleave  
Programmable /CAS latency (CL): 2, 3  
Byte control by DQMB  
Refresh cycles: 8192 refresh cycles/64ms  
2 variations of refresh  
Auto refresh  
Self refresh  
Document No. E0241E30 (Ver. 3.0)  
Date Published May 2002 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2002  

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