Datasheet > EBE11FD8AGFD

EBE11FD8AGFD

更新时间： 2022-12-19 13:36:55

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
22页	189K
描述
1GB Fully Buffered DIMM

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数据手册

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EBE11FD8AGFD 数据手册

EBE11FD8AGFD, EBE11FD8AGFN

Serial PD Matrix for FB-DIMM

Byte No. Function described

Byte value

116

Hex value

92H

Number of serial PD bytes written / SPD device size / CRC coverage

SPD revision

Revision 1.1

11H

Key byte / DRAM device type

Voltage levels of this assembly

SDRAM addressing

DDR2 SDRAM FB-DIMM 09H

VDD = 1.8V, VCC = 1.5V 12H

14-row, 10-column

8.2mm

44H

24H

07H

11H

00H

01H

04H

Module physical attributes

Module Type / Thickness

Module organization

FB-DIMM

2 ranks / 8bits

Fine timebase (FTB) dividend / divisor

Medium timebase dividend

Medium timebase divisor

SDRAM minimum cycle time (tCK (min.))

-6E

3.00ns

0CH

-5C

3.75ns

8ns

0FH

20H

33H

SDRAM maximum cycle time (tCK (max.))

SDRAM /CAS latencies supported

-6E

CL = 3, 4, 5

-5C

CL = 3, 4

15ns

23H

3CH

42H

SDRAM minimum /CAS latencies time (tCAS)

SDRAM write recovery times supported

-6E

WR = 2 to 5

-5C

WR = 2 to 4

15ns

32H

3CH

42H

SDRAM write recovery time (tWR)

SDRAM write latencies supported

WL = 2 to 5

SDRAM additive latencies supported

AL = 0 to 3

15ns

40H

3CH

1EH

3CH

00H

B4H

F0H

A4H

01H

1EH

03H

07H

01H

SDRAM minimum /RAS to /CAS delay (tRCD)

SDRAM minimum row active to row active delay (tRRD)

SDRAM minimum row precharge time (tRP)

SDRAM upper nibbles for tRAS and tRC

7.5ns

15ns

SDRAM minimum active to precharge time (tRAS)

SDRAM minimum auto-refresh to active /auto-refresh time (tRC)

SDRAM minimum refresh recovery time delay (tRFC), LSB

SDRAM minimum refresh recovery time delay (tRFC), MSB

SDRAM Internal write to read command delay (tWTR)

SDRAM Internal read to precharge command delay (tRTP)

SDRAM burst lengths supported

45ns

60ns

105ns

7.5ns

BL = 4, 8

ODT = 50, 75, 150Ω

Supported

SDRAM terminations supported

SDRAM drivers supported

SDRAM average refresh interval (tREFI) / double refresh mode bit /

high temperature self-refresh rate support indication

7.8µs Double/HT refresh C2H

Tcasemax (TC (max.)) delta / DT4R4W delta

Psi T-A SDRAM at still air

95°C/ 0.75°C

52H

××

Preliminary Data Sheet E0867E20 (Ver. 2.0)

1...15 16 171819 20 21 22

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