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EBE10UE8AEWA-8G-E PDF预览

EBE10UE8AEWA-8G-E

更新时间: 2024-02-28 05:27:01
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
30页 228K
描述
1GB Unbuffered DDR2 SDRAM DIMM

EBE10UE8AEWA-8G-E 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:240
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.84
访问模式:SINGLE BANK PAGE BURST最长访问时间:0.45 ns
其他特性:AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAXJESD-30 代码:R-XDMA-N240
长度:133.35 mm内存密度:1073741824 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:8
功能数量:1端口数量:1
端子数量:240字数:134217728 words
字数代码:128000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:128MX8封装主体材料:UNSPECIFIED
封装代码:DIMM封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
座面最大高度:30 mm自我刷新:YES
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL宽度:3.18 mm
Base Number Matches:1

EBE10UE8AEWA-8G-E 数据手册

 浏览型号EBE10UE8AEWA-8G-E的Datasheet PDF文件第3页浏览型号EBE10UE8AEWA-8G-E的Datasheet PDF文件第4页浏览型号EBE10UE8AEWA-8G-E的Datasheet PDF文件第5页浏览型号EBE10UE8AEWA-8G-E的Datasheet PDF文件第7页浏览型号EBE10UE8AEWA-8G-E的Datasheet PDF文件第8页浏览型号EBE10UE8AEWA-8G-E的Datasheet PDF文件第9页 
EBE10UE8AEWA  
Byte No. Function described  
Maximum data access time (tAC)  
from clock at CL = X 2  
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments  
26  
0
1
0
1
0
0
0
0
50H  
0.5ns*1  
-8G (CL = 4)  
-6E (CL = 3)  
0
0
1
0
1
1
0
1
0
1
0
1
0
0
0
0
60H  
3CH  
0.6ns*1  
15ns  
27  
28  
29  
30  
31  
Minimum row precharge time (tRP)  
Minimum row active to row active  
delay (tRRD)  
0
0
0
0
0
0
1
1
0
1
1
0
0
1
1
1
0
1
1
1
0
1
0
0
0
0
0
1
1
1EH  
3CH  
2DH  
01H  
7.5ns  
Minimum /RAS to /CAS delay (tRCD) 0  
15ns  
Minimum active to precharge time  
(tRAS)  
0
45ns  
Module rank density  
0
0
0
0
0
0
1G bytes  
Address and command setup time  
before clock (tIS)  
-8G  
32  
0
0
0
0
0
0
1
1
1
0
1
0
0
0
0
0
0
0
0
0
1
0
1
1
1
1
0
0
1
0
1
0
1
1
1
17H  
20H  
25H  
27H  
05H  
0.17ns*1  
0.20ns*1  
0.25ns*1  
0.27ns*1  
0.05ns*1  
-6E  
Address and command hold time  
after clock (tIH)  
-8G  
33  
-6E  
Data input setup time before clock  
(tDS)  
-8G  
34  
35  
-6E  
0
0
0
0
0
0
1
1
0
0
0
0
0
1
0
0
10H  
12H  
0.10ns*1  
0.12ns*1  
Data input hold time after clock (tDH)  
-8G  
-6E  
0
0
0
0
0
1
1
1
0
1
1
1
1
0
1
0
17H  
3CH  
0.17ns*1  
15ns*1  
36  
37  
Write recovery time (tWR)  
Internal write to read command delay  
(tWTR)  
0
0
0
0
0
0
0
0
0
1
1
0
1
1
0
1
1
0
1
1
0
0
0
0
1EH  
1EH  
00H  
7.5ns*1  
7.5ns*1  
TBD  
Internal read to precharge command  
delay (tRTP)  
38  
39  
Memory analysis probe  
characteristics  
40  
41  
Extension of Byte 41 and 42  
Active command period (tRC)  
0
0
0
0
0
1
0
1
0
1
1
1
1
0
0
0
06H  
3CH  
60ns*1  
Auto refresh to active/  
Auto refresh command cycle (tRFC)  
42  
43  
44  
0
1
0
0
0
1
0
0
0
0
1
0
0
0
0
1
0
1
1
1
1
0
0
1
1
1
0
1
0
1
1
0
0
0
1
1
0
0
0
0
7FH  
80H  
14H  
18H  
1EH  
127.5ns*1  
8ns*1  
SDRAM tCK cycle max. (tCK max.)  
Dout to DQS skew  
-8G  
0.20ns*1  
0.24ns*1  
0.30ns*1  
-6E  
Data hold skew (tQHS)  
-8G  
45  
46  
-6E  
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
0
22H  
00H  
0.34ns*1  
PLL relock time  
Undefined  
Preliminaly Data Sheet E1293E10 (Ver. 1.0)  
6

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