EBD12UB8ALF-7A

更新时间： 2024-02-16 07:06:03

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
16页	160K
描述
128MB Unbuffered DDR SDRAM DIMM

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中文翻译

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数据手册

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EBD12UB8ALF-7A 数据手册

EBD12UB8ALF

Electrical Specifications

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

–0.5 to +3.6

VDD, VDDQ

Operating temperature

Storage temperature

0 to +70

–55 to +125

°C

Tstg

Notes: 1. Respect to VSS.

Ca ution Exposing the device to str ess above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = 0 to +55°C)

Parameter

Symbol

min.

Typ

2.5

max.

Unit

Notes

1, 2

Supply voltage

VDD, VDDQ 2.3

2.7

VSS

Input reference voltage

Termination voltage

VREF

VTT

0.49 × VDDQ

—

0.51 × VDDQ

VREF + 0.04

VDDQ + 0.3

VREF – 0.18

VDDQ + 0.3

VDDQ + 0.6

VREF – 0.04 VREF

DC Input high voltage

DC Input low voltage

DC Input signal voltage

DC differential input voltage

VIH

VREF + 0.18

–0.3

—

1, 3

1, 4

VIL

VIN (dc)

–0.3

VSWING (dc) 0.36

Notes: 1. All parameters are referred to VSS, when measured.

2. VDDQ must be lower than or equal to VDD.

3. VIH is allowed to exceed VDD up to 4.6V for the period shorter than or equal to 5ns.

4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.

5. VIN (dc) specifies the allowable dc execution of each differential input.

6. VSWING (dc) specifies the input differential voltage required for switching.

Preliminary Data Sheet E0216E10 (Ver. 1.0)

1...7 8 91011 12 13...16

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