Datasheet > E3V3SBPC1AM

E3V3SBPC1AM

更新时间： 2023-12-06 20:10:48

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
4页	262K
描述
静电保护二极管

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E3V3SBPC1AM 数据手册

E3V3SBPC1AM

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low leakage current

• Low clamping voltage

Transparent top view

Simplified outline DFN1006-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

170

Unit

Peak Power Dissipation (tp = 8/20 μs)

Peak Pulse Current (tp = 8/20 μs)

ESD per IEC 61000-4-2

I_PP

± 30

Air

Contact

V_ESD

Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

3.4

Reverse Current

at V_R=3.3 V

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 16 A , tp = 8/20 µs

I_R

500

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

5.3

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.14

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 4

Dated: 03/03/2022 Rev : 01

12 3 4

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