Datasheet > E3V3VUPG2C

E3V3VUPG2C

更新时间： 2023-12-06 20:11:45

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	202K
描述
静电保护二极管

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E3V3VUPG2C 数据手册

E3V3VUPG2C

ESD Protection Diode

Features

• Low leakage current

Bottom view

DFN1006-3H Plastic Package

1. Cathode 2. Cathode 3. Anode

Bottom View

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 15

IEC61000-4-2 (ESD)

V_ESD

- 55 to + 125

- 55 to + 150

Operation Junction Temperature Range

Storage Temperature Range

T_j

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Working Peak Reverse Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_R= 3.3 V

I_R

µA

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs, Any I/O Pins to GND

at I_PP= 4 A , tp = 8/20 µs, Any I/O Pins to GND

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns, Any I/O Pins to GND

at I_TLP=16 A, tp = 0.2/100 ns, Any I/O Pins to GND

V_CL

10.3

18.2

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

0.45

0.66

R_dyn

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A.

1 / 3

Dated: 15/03/2023 Rev : 03

12 3

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