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E3V3UBWB1A PDF预览

E3V3UBWB1A

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 216K
描述
静电保护二极管

E3V3UBWB1A 数据手册

 浏览型号E3V3UBWB1A的Datasheet PDF文件第2页浏览型号E3V3UBWB1A的Datasheet PDF文件第3页 
E3V3UBWB1A  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Anode  
PIN  
1
Features  
• Low leakage current  
• Ultra low capacitance  
• Low clamping voltage  
2
Anode  
2
1
Applications  
Top View  
• Smart Phones  
• Wireless Systems  
Simplified outline SOD-323(Bend Lead) and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
100  
4
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
IPP  
A
Peak Pulse Current (tp = 8/20 µs)  
IEC61000-4-2 (ESD)  
Air  
Contact  
± 20  
± 15  
VESD  
KV  
Tj  
- 55 to + 125  
- 55 to + 150  
Operation Temperature Range  
Storage Temperature Range  
Tstg  
Characteristics at Ta = 25℃  
Parameter  
Min.  
-
Typ.  
-
Max.  
3.3  
Symbol  
VRWM  
V(BR)R  
Unit  
Reverse Working Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
4
-
-
-
6.2  
0.2  
Reverse Current  
at VR =3.3 V  
IR  
µA  
Clamping Voltage  
at IPP = 1 A , tp = 8/20 µs  
at IPP = 4 A , tp = 8/20 µs  
-
-
-
-
11.5  
25  
VC  
V
V
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
16  
38  
-
-
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
0.3  
1.8  
-
-
pF  
Rdyn  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .  
1 / 3  
®
Dated: 25/04/2022 Rev : 01  

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