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E3M0065090D PDF预览

E3M0065090D

更新时间: 2024-11-24 01:25:55
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
10页 853K
描述
Silicon Carbide Power MOSFET E-Series Automotive

E3M0065090D 数据手册

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E3M0065090D  
Silicon Carbide Power MOSFET  
E-Series Automotive  
N-Channel Enhancement Mode  
Features  
Package  
3rd generation SiC MOSFET technology  
High blocking voltage with low On-resistance  
High speed switching with low capacitances  
Fast intrinsic diode with low reverse recovery (Qrr)  
Halogen free, RoHS compliant  
Automotive Qualified (AEC-Q101) and PPAP Capable  
Benefits  
Higher system efficiency  
Reduced cooling requirements  
Increased power density  
Increased system switching frequency  
Applications  
Renewable energy  
EV battery chargers  
High voltage DC/DC converters  
Switch Mode Power Supplies  
Marking  
E3M0065090  
Part Number  
E3M0065090D  
Package  
TO-247-3  
Maximum Ratings (TC = 25 ˚C unless otherwise specified)  
Parameter  
Value  
Unit  
Test Conditions  
Note  
Symbol  
VGS = 0 V, ID = 100 μA  
Drain - Source Voltage  
Gate - Source Voltage  
900  
-8/+18  
-4/+15  
35  
V
V
V
VDSmax  
VGSmax  
VGSop  
Note: 1  
Note: 2  
Fig. 19  
Gate - Source Voltage (Recommended operating values)  
VGS = 15 V, TC = 25˚C  
VGS = 15 V, TC = 100˚C  
Continuous Drain Current  
A
ID  
23  
Pulsed Drain Current  
90  
A
Fig. 22  
ID(pulse)  
Pulse width tP limited by Tjmax  
Power Dissipation  
125  
W
˚C  
˚C  
TC=25˚C, T = 150 ˚C  
Fig. 20  
PD  
J
-55 to  
+150  
Operating Junction and Storage Temperature  
Solder Temperature  
T , Tstg  
J
1.6mm (0.063”) from case for  
10s  
260  
TL  
1
8.8  
Nm  
lbf-in  
Mounting Torque  
M3 or 6-32 screw  
Md  
Note (1): When using MOSFET Body Diode VGSmax = -4V/+18V  
Note (2): MOSFET can also safely operate at 0/+15 V  
1
E3M0065090D Rev. A, 08-2018  

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