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DZ2424000L PDF预览

DZ2424000L

更新时间: 2024-11-21 14:41:51
品牌 Logo 应用领域
松下 - PANASONIC PC测试光电二极管
页数 文件大小 规格书
5页 336K
描述
Zener Diode, 24V V(Z), 5%, 2W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, TMINIP2-F2-B, SC-110A, 2 PIN

DZ2424000L 技术参数

生命周期:Transferred零件包装代码:SC-110
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:3.75
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:392160Samacsys Pin Count:2
Samacsys Part Category:Zener DiodeSamacsys Package Category:Small Outline Diode Flat Lead
Samacsys Footprint Name:DZ2424000LSamacsys Released Date:2019-05-07 13:26:05
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:30 ΩJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:2 W
标称参考电压:24 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:10 mABase Number Matches:1

DZ2424000L 数据手册

 浏览型号DZ2424000L的Datasheet PDF文件第2页浏览型号DZ2424000L的Datasheet PDF文件第3页浏览型号DZ2424000L的Datasheet PDF文件第4页浏览型号DZ2424000L的Datasheet PDF文件第5页 
Doc No. TT4-EA-13798  
Revision. 3  
Zener Diode  
DZ2424000L  
DZ2424000L  
Silicon epitaxial planar type  
Unit: mm  
For constant voltage / For surge absorption circuit  
Capability of withstanding a high surge type  
DZ2W240 in Power type package  
2.4  
0.15  
2
Features  
Excellent rising characteristics of zener current Iz  
Low zener operating resistance Rz  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
Marking Symbol:  
Packaging  
DG  
1.75  
0.85  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Cathode  
2. Anode  
Absolute Maximum Ratings Ta = 25 C  
Panasonic  
JEITA  
TMiniP2-F2-B  
SC-110A  
Parameter  
Repetitive peak forward current  
Forward current  
Symbol  
IFRM  
IF  
Rating  
500  
400  
2
100  
±30  
150  
Unit  
mA  
mA  
W
W
kV  
°C  
Code  
*1  
PT  
Total power dissipation  
Non-repetitive reverse power surge  
*2  
PZSM  
ESD  
Tj  
Internal Connection  
*3  
Electrostatic discharge  
2
Junction temperature  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
Note: *1 Mounted on ceramics print circuit board.  
Board size: 50 mm × 50 mm  
Board thickness: 0.8 mm  
1
Soldering size: 2 mm × 2 mm  
*2 t = 0.1ms  
*3  
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)  
Electrical Characteristics Ta = 25 C 3 C  
Parameter Symbol  
Conditions  
IF = 200 mA  
IZ = 10 mA  
IZ = 10 mA  
VR = 17.0 V  
IZ = 10 mA  
Min Typ Max  
Unit  
V
V
μA  
Forward voltage  
VF  
VZ  
RZ  
IR  
1.2  
Zener voltage *1, *2  
22.80 24.00 25.20  
Zener operating resistance  
Reverse current  
30  
10  
*3  
SZ  
24.0  
mV/°C  
Temperature coefficient of zener voltage  
Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.  
2. Absolute frequency of input and output is 5 MHz.  
3. *1 The temperature must be controlled 25°C for VZ mesurement.  
VZ value measured at other temperature must be adjusted to VZ (25°C)  
*2 VZ guaranted 20 ms after current flow.  
*3 Tj = 25°C to 150°C  
Page 1 of 4  
Established : 2011-09-09  
Revised : 2013-05-13  

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