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DZ23B22-GS08 PDF预览

DZ23B22-GS08

更新时间: 2024-11-23 18:35:15
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
9页 239K
描述
DIODE 22 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode

DZ23B22-GS08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.71配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:55 ΩJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.3 W认证状态:Not Qualified
标称参考电压:22 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:2%工作测试电流:5 mA
Base Number Matches:1

DZ23B22-GS08 数据手册

 浏览型号DZ23B22-GS08的Datasheet PDF文件第2页浏览型号DZ23B22-GS08的Datasheet PDF文件第3页浏览型号DZ23B22-GS08的Datasheet PDF文件第4页浏览型号DZ23B22-GS08的Datasheet PDF文件第5页浏览型号DZ23B22-GS08的Datasheet PDF文件第6页浏览型号DZ23B22-GS08的Datasheet PDF文件第7页 
DZ23-Series  
Vishay Semiconductors  
VISHAY  
Small Signal Zener Diodes, Dual  
Features  
• This diode is also available in other case styles  
and configurations including: the dual diode com-  
mon cathode configuration with type designation  
AZ23, the single diode SOT-23 case with the type  
designation BZX84C, and the single diode  
3
1
2
18110  
SOD-123 case with the type designation BZT52C.  
• Dual Silicon Planar Zener Diodes, Common  
Cathode  
• The Zener voltages are graded according to the  
international E 24 standard. Standard Zener volt-  
age tolerance is ± 5 %. Replace "C" with "B" for  
2 % tolerance.  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
• The parameters are valid for both diodes in one  
case. VZ and rzj of the two diodes in one case is  
5 %  
GS18 / 10 k per 13 " reel, (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel, (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
mW  
1)  
Power dissipation  
P
tot  
300  
1)  
Device on fiberglass substrate, see layout  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to ambient air  
Junction temperature  
R
°C/W  
thJA  
420  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Device on fiberglass substrate, see layout  
Document Number 85765  
Rev. 1.5, 08-Jul-04  
www.vishay.com  
1

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