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DXTP3C60PS PDF预览

DXTP3C60PS

更新时间: 2023-12-06 20:11:34
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 646K
描述
PNP, 60V, 3A, PowerDI5060-8

DXTP3C60PS 数据手册

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DXTP3C60PS  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IB  
Value  
-60  
-60  
-7  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Base Current  
-1  
A
Continuous Collector Current  
Peak Pulse Collector Current  
-3  
A
IC  
-8  
A
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
Value  
Unit  
W
Power Dissipation  
(Note 6)  
(Note 5)  
(Note 5)  
(Note 6)  
5
Thermal Resistance, Junction to Lead  
5.6  
73  
RϴJL  
°C/W  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
RϴJA  
°C/W  
°C  
30  
-55 to +175  
TJ, TSTG  
ESD Ratings (Note 7)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
Value  
8000  
400  
Unit  
JEDEC Class  
ESD HBM  
ESD MM  
V
V
3A  
C
Notes:  
5. For a device mounted with the collector lead on 25mm × 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air  
conditions whilst operating in a steady-state.  
6. Same as Note 5, except the device is measured at t 5 sec.  
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
www.diodes.com  
July 2018  
© Diodes Incorporated  
DXTP3C60PS  
Document number: DS39128 Rev.2 - 2  

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