DXTP07040CFGQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BVCBO
BVCEO
BVEBO
Min
-50
-40
-7
Typ.
-65
Max
—
Unit
V
Test Condition
IC = -100µA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
-57
—
V
IC = -10mA
-8.8
—
—
V
IE = -100µA
—
-20
-10
-20
800
—
nA
µA
nA
—
—
—
—
mV
mV
mV
V
VCB = -40V
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
IEBO
—
—
VCB = -40V, TA = +125°C
VEB = -6V
—
—
300
250
200
150
—
527
432
377
273
-99
IC = -10mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -500mA, IB = -5mA
IC = -1A, IB = -10mA
IC = -2A, IB = -50mA
IC = -1A, IB = -10mA
IC = -1A, VCE = -2V
DC Current Transfer Static Ratio (Note 11)
hFE
—
—
-200
-400
-500
-1
—
Collector-Emitter Saturation Voltage (Note 11)
-177
-200
-0.8
-0.75
VCE(sat)
—
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
—
VBE(sat)
VBE(on)
—
0.9
V
IC = -50mA, VCE = -5V,
f = 50MHz
Transitional Frequency
Output Capacitance
100
—
—
MHz
fT
—
—
—
24
35
—
—
—
pF
ns
ns
Cobo
tON
VCB = -10V, f = 1MHz
VCC = -10V, IC = -500mA,
IB1 = -IB2 = -50mA
Switching Time
600
tOFF
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
DXTP07040CFG
Datasheet Number: DS41047 Rev. 1 - 2
4 of 7
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October 2018
© Diodes Incorporated