Datasheet > DXTN3C100PD

DXTN3C100PD

更新时间： 2023-12-06 20:11:48

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	584K
描述
Dual NPN, 100V, 3A, PowerDI5060-8

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DXTN3C100PD 数据手册

DXTN3C100PD

Absolute Maximum Ratings (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_B

Value

100

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

500

Continuous Collector Current

Peak Pulse Collector Current

I_C

I_CM

Thermal Characteristics (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

1.47

Unit

(Notes 5, 7)

(Notes 6, 7)

(Notes 5, 7)

(Notes 6, 7)

(Note 8)

mW/°C

Power Dissipation

Linear Derating Factor

P_D

11.76

Thermal Resistance, Junction to Ambient

R_θJA

°C/W

°C

Thermal Resistance, Junction to Lead

5.7

R_θJL

Operating and Storage Temperature Range

-55 to +150

T_J, T_STG

ESD Ratings (Note 9)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

Value

4000

400

Unit

JEDEC Class

ESD HBM

ESD MM

Notes:

5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

6. Same as Note 5, except the device is measured at t ≤ 5 sec.

7. For a dual device with one active die.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 8

www.diodes.com

April 2021

DXTN3C100PD

Document number: DS43417 Rev. 2 - 2

123 4 5 6 7 8

下载PDF

与DXTN3C100PD相关器件

型号	品牌	描述	获取价格	数据表
DXTN3C100PDQ	DIODES	Dual NPN, 100V, 3A, PowerDI5060-8	获取价格
DXTN3C100PSQ	DIODES	NPN, 100V, 3A, PowerDI5060-8	获取价格
DXTN3C60PS	DIODES	NPN, 60V, 3A, PowerDI5060-8	获取价格
DXTN3C60PSQ	DIODES	NPN, 60V, 3A, PowerDI5060-8	获取价格
DXTN58100CFDB	DIODES	NPN, 100V, 4A, DFN2020-3	获取价格
DXTN5820DFDB	DIODES	NPN, 20V, 6A, DFN2020-3	获取价格