Datasheet > DXTN3C100PD

DXTN3C100PD

更新时间： 2023-12-06 20:11:48

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	584K
描述
Dual NPN, 100V, 3A, PowerDI5060-8

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DXTN3C100PD 数据手册

DXTN3C100PD

Electrical Characteristics (@ T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 10)

Emitter-Base Breakdown Voltage

100

—

BV_CBO

BV_CEO

BV_EBO

I_C= 100µA

I_C= 10mA

I_E= 100µA

V_CB= 80V

—

100

µA

Collector-Base Cutoff Current

I_CBO

—

V_CB= 80V @Tj = 150°C

V_EB= 7V

Emitter Cutoff Current

—

100

I_EBO

I_CES

Collector-Emitter Cutoff Current

ON CHARACTERISTICS (Note 10)

—

V_CES= 80V

150

—

250

100

—

_C= 500mA, V_CE= 10V

I_C= 1A, V_CE= 10V

I_C= 2A, V_CE= 10V

I_C= 3A, V_CE= 10V

I_C= 1A, I_B= 50mA

I_C= 3A, I_B= 300mA

I_C= 1A, I_B= 50mA

I_C= 2A, I_B= 200mA

I_C= 0.1A, V_CE= 2V

DC Current Gain

—

h_FE

—

150

330

150

1.0

1.2

0.85

mΩ

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Resistance

Base-Emitter Saturation Voltage

V_CE(sat)

R_CE(sat)

V_BE(sat)

V_BE(on)

225

0.86

1.0

Base-Emitter Turn-On Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Output Capacitance

Delay Time

0.67

—

130

—

MHz

f_T

C_obo

t_d

V_CE= 10V, I_C= 100mA, f = 100MHz

V_CB= 10V, f = 1MHz

Rise Time

t_r

Turn-On Time

t_(on)

t_s

V_CC= 12.5V, I_C= 1A

I_B1= -I_B2= 0.05A

Storage Time

620

Fall Time

t_f

Turn-Off Time

660

t_off

Note:

10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

4 of 8

www.diodes.com

April 2021

DXTN3C100PD

Document number: DS43417 Rev. 2 - 2

1 2 345 6 7 8

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