Datasheet > DUL1506ALN

DUL1506ALN

更新时间： 2024-11-24 19:55:19

品牌	Logo	应用领域
MICROSS		局域网功效二极管
页数	文件大小	规格书
7页	481K
描述
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Gallium Arsenide, TO-257AA, TO-257ALN, 3 PIN

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DUL1506ALN 数据手册

August 2009

Preliminary

DUL1506 – 600V, 15A

HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE

Features

General Description

ꢀ

High maximum junction temperature; up to

+260°C vs. +175°C for silicon diodes

The DUL1506 is a GaAs P-I-N Rectifier. It uses a

patented liquid phase epitaxy (LPE) construction

to provide temperature performance above current

Silicon, Silicon Carbide and Gallium Nitride

products of a similar specification. The device is

able to function stably well above the maximum T_J

of more traditional diodes of this type while

maintaining parity of performance in terms of key

parameters such as recovery time and forward

voltage.

Lower and temperature independent

dynamic recovery characteristics over the

full specified temperature range

Lower leakage current at all operating

temperatures

ꢀ

Very low capacitance

Package Types

Applications

ꢀ

High temperature electronics

Power Modules

Hybrid circuits

TO-257

TO-276AB (SMD)

BARE DIE

Thermal Characteristics

SYMBOL

PARAMETER

PACKAGE

TO-276Al

RATINGS

UNITS

°C/W

R_θJC

MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE

3.51

1.45

1.24

TO-257AlN

TO-276AB

TO-257Al / TO-257AlN

TO-276AB

BARE DIE (3.1mm²)

ORDERING

PART #

PACKAGE

TEMP RANGE

DUL1506AL

TO-257Al

-65 TO 260°C

2 3

1. CATHODE

2. ANODE

DUL1506ALN TO-257AlN

1. ANODE

2. COMMON CATHODE

3. COMMON CATHODE

(DIE BACKSIDE)

DUL1506S

TO-276AB

BARE DIE

DUL1506-AG

DUL1506-GG BARE DIE

Europe: sales@mintech.co.uk

USA : ussales@mintech.co.uk

CATHODE

ANODE

CATHODE

China: chinasales@mintech.co.uk

Rev. 1.4 7^THAugust 2009

www.mintech.co.uk

12 3 4 5 6 7

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