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DTD133HLTL3 PDF预览

DTD133HLTL3

更新时间: 2024-11-16 19:19:47
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 82K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 PIN

DTD133HLTL3 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78Is Samacsys:N
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 3最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

DTD133HLTL3 数据手册

 浏览型号DTD133HLTL3的Datasheet PDF文件第2页 

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