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DTC144EM3T5G PDF预览

DTC144EM3T5G

更新时间: 2024-02-07 01:36:36
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
10页 82K
描述
Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

DTC144EM3T5G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 631AA-01, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.33Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC144EM3T5G 数据手册

 浏览型号DTC144EM3T5G的Datasheet PDF文件第1页浏览型号DTC144EM3T5G的Datasheet PDF文件第3页浏览型号DTC144EM3T5G的Datasheet PDF文件第4页浏览型号DTC144EM3T5G的Datasheet PDF文件第5页浏览型号DTC144EM3T5G的Datasheet PDF文件第6页浏览型号DTC144EM3T5G的Datasheet PDF文件第7页 
DTC114EM3T5G Series  
DEVICE MARKING AND RESISTOR VALUES  
Device  
DTC114EM3T5G  
Marking  
R1 (K)  
R2 (K)  
Package  
Shipping  
8A  
10  
10  
DTC124EM3T5G  
DTC144EM3T5G  
DTC114YM3T5G  
DTC114TM3T5G  
DTC143TM3T5G  
DTC123EM3T5G  
DTC143EM3T5G  
DTC143ZM3T5G*  
DTC124XM3T5G*  
DTC123JM3T5G  
DTC115EM3T5G  
DTC144WM3T5G*  
DTC144TM3T5G  
8B  
8C  
8D  
8E  
8F  
8H  
8J  
22  
47  
22  
47  
47  
10  
10  
4.7  
2.2  
4.7  
4.7  
22  
2.2  
4.7  
47  
47  
47  
100  
22  
SOT−723  
(Pb−Free)  
8000/Tape & Reel  
8K  
8L  
8M  
8N  
8P  
8T  
2.2  
100  
47  
47  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*Available upon request.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
P
D
FR−4 Board (Note 1) @ T = 25°C  
Derate above 25°C  
260  
2.0  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient (Note 1)  
R
q
JA  
480  
°C/W  
Total Device Dissipation,  
P
D
FR−4 Board (Note 2) @ T = 25°C  
Derate above 25°C  
600  
4.8  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient (Note 2)  
Junction and Storage Temperature Range  
R
205  
°C/W  
°C  
q
JA  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ minimum pad.  
2. FR−4 @ 1.0 × 1.0 inch pad.  
http://onsemi.com  
2
 

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