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DTC114YE/D

更新时间： 2024-02-21 20:29:38
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 78K
描述
Bias Resistor Transistor

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DTC114YE/D 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.57
Is Samacsys：N其他特性：DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)：0.07 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：68
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DTC114YE/D 数据手册

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ON Semiconductort  
DTC114YE  
Product Preview  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
3
2
1
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base–emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. The DTC114YE is housed in the  
SOT–416/SC–90 package which is ideal for low power surface mount  
applications where board space is at a premium.  
CASE 463–01, STYLE 1  
SOT–416/SC–90  
OUT (3)  
R
1
IN (1)  
• Simplifies Circuit Design  
R
2
• Reduces Board Space  
GND (2)  
• Reduces Component Count  
R = 10 kΩ  
1
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
R = 47 kΩ  
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
50  
Unit  
Output Voltage  
V
O
Vdc  
Vdc  
Input Voltage  
V
I
40  
Output Current  
I
O
100  
mAdc  
DEVICE MARKING  
DTC114YE = 69  
THERMAL CHARACTERISTICS  
(1)  
Power Dissipation @ T = 25°C  
P
*125  
mW  
°C  
A
D
Operating and Storage Temperature Range  
Junction Temperature  
T , T  
J
–55 to +150  
150  
stg  
T
°C  
J
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
—
Typ  
—
Max  
0.3  
—
Unit  
Input Off Voltage (V = 5.0 Vdc, I = 100 µAdc)  
V
I(off)  
V
I(on)  
Vdc  
Vdc  
O
O
Input On Voltage (V = 0.3 Vdc, I = 1.0 mAdc)  
1.4  
—
—
O
O
Output On Voltage (I = 5.0 mAdc, I = 0.25 mAdc)  
V
O(on)  
—
0.3  
0.88  
500  
—
Vdc  
O
I
Input Current (V = 5.0 Vdc)  
I
I
—
—
mAdc  
nAdc  
—
I
Output Cutoff Current (V = 50 Vdc)  
I
—
—
O
O(off)  
DC Current Gain (V = 5.0 Vdc, I = 5.0 mAdc)  
G
68  
7.0  
—
O
O
I
Input Resistance  
Resistance Ratio  
R
10  
0.21  
13  
kOhms  
1
R /R  
0.17  
0.25  
1
2
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinuethis product without notice.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
DTC114YE/D  
12345678

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