DTC114YEB

更新时间： 2024-09-23 06:54:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	154K
描述
100mA / 50V Digital transistors

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中文翻译

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DTC114YEB 数据手册

100mA / 50V Digital transistors

(with built-in resistors)

DTC114YEB

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

EMT3F

1.6

0.7

0.26

(3)

zFeatures

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

(1)

0.5 0.5

1.0

(2)

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

0.13

(1) IN

(2) GND

(3) OUT

Each lead has same dimensions

Abbreviated symbol : 64

zStructure

zInner circuit

NPN silicon epitaxial planar transistor type

(Resistor built-in)

OUT

GND

OUT

zPackaging specifications

Package

EMT3F

Taping

Packaging type

Code

GND

Part No.

Basic ordering unit (pieces)

3000

R1=10kΩ R2=47kΩ

DTC114YEB

zAbsolute maximum ratings (Ta=25°C)

Parameter

Supply voltage

Symbol

Limits

Unit

VCC

Input voltage

−6 to +40

Collector current

Ic(max) ^∗1

100

°C

Output current

∗2

Power dissipation

150

Junction temperature

Range of storage temperature

Tstg

150

−55 to +150

°C

∗1 Characteristics of built-in transistor

∗2 Each terminal mounted on a recommended land

www.rohm.com

2009.07 - Rev.B

1/2

12 3

中文翻译

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