是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.63 |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 10 | 最大集电极电流 (IC): | 0.1 A |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 33 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.2 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTC113ZE | TSC |
获取价格 |
NPN Small Signal Transistor Small Signal Diode | |
DTC113ZE | SECOS |
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Digital Transistors NPN (Built-in Resistors) | |
DTC113ZE | CJ |
获取价格 |
Digital transistors (built-in resistors) | |
DTC113ZE | LGE |
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数字晶体管 | |
DTC113ZE | YANGJIE |
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SOT-523 | |
DTC113ZE | CJ |
获取价格 |
SOT-523 | |
DTC113ZE | BL Galaxy Electrical |
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50V,100mA,NPN Bipolar Digital Transistor | |
DTC113ZE | RECTRON |
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Package / Case : SOT-523;Mounting Style : SMD/SMT;Power Rating : 0.15 W;Transistor Polarit | |
DTC113ZE (开发中) | ROHM |
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本产品是电阻内置型晶体管。由于内置了偏压用电阻,因此输入侧无需外接电阻即可构成逆变电路。 | |
DTC113ZE3 | ROHM |
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DTC113ZE3 is an digital transistor (Resistor built-in type transistor). Built-in bias resi |