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DTA144EXV3T1 PDF预览

DTA144EXV3T1

更新时间: 2024-12-01 03:13:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
10页 125K
描述
Digital Transistors (BRT)

DTA144EXV3T1 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-89包装说明:LEAD FREE, CASE 463C-03, SC-89, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTA144EXV3T1 数据手册

 浏览型号DTA144EXV3T1的Datasheet PDF文件第2页浏览型号DTA144EXV3T1的Datasheet PDF文件第3页浏览型号DTA144EXV3T1的Datasheet PDF文件第4页浏览型号DTA144EXV3T1的Datasheet PDF文件第5页浏览型号DTA144EXV3T1的Datasheet PDF文件第6页浏览型号DTA144EXV3T1的Datasheet PDF文件第7页 
DTA114EXV3T1 Series  
Preferred Devices  
Digital Transistors (BRT)  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The digital transistor  
contains a single transistor with a monolithic bias network consisting  
of two resistors; a series base resistor and a base−emitter resistor. The  
digital transistor eliminates these individual components by  
integrating them into a single device. The use of a digital transistor can  
reduce both system cost and board space. The device is housed in the  
SC−89 package which is designed for low power surface mount  
applications.  
http://onsemi.com  
PNP SILICON  
DIGITAL  
TRANSISTORS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape & Reel  
Lead−Free Plating (Pure Sn)  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
V
CEO  
3
50  
Vdc  
2
I
C
100  
mAdc  
1
SC−89  
CASE 463C  
STYLE 1  
MARKING DIAGRAM  
3
xx D  
1
2
xx = Specific Device Code  
(See Marking Table on page 2)  
D = Date Code  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 0  
DTA114EXV3T1/D  

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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23
DTA144GCA ETC

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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
DTA144GCAT117 ROHM

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
DTA144GCAT216 ROHM

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,