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DTA143TE PDF预览

DTA143TE

更新时间: 2024-02-15 16:15:50
品牌 Logo 应用领域
TSC 晶体晶体管光电二极管
页数 文件大小 规格书
3页 209K
描述
PNP Small Signal Transistor

DTA143TE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTA143TE 数据手册

 浏览型号DTA143TE的Datasheet PDF文件第2页浏览型号DTA143TE的Datasheet PDF文件第3页 
DTA143 TM/TE/TUA/TCA/TSA  
PNP Small Signal Transistor  
Small Signal Product  
Features  
Equivalent Circuit  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
Only the on/off conditions need to be set for  
operation, marking device design easy.  
Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
Ordering Information (example)  
Packing code  
(Green)  
Part No.  
Package  
SOT-723  
Packing  
Packing code  
RM  
Marking  
93  
Manufacture code  
M0  
RMG  
DTA143 TM  
8K / 7" Reel  
Note : Detail please see "Ordering Information(detail, example)" below.  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
TUA / TCA  
200  
Symbol  
Unit  
Parameter  
TM  
TE  
TSA  
300  
Power Dissipation  
PD  
100  
150  
mW  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC  
-50  
-50  
V
-5  
V
Collector Current  
-100  
mA  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to + 150  
Notes : 1. Valid provided that electrodes are kept at ambient temperature  
Condtion  
Symbol  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
Parameter  
Ic= -50μA , IE=0  
Ic= -1mA , IB=0  
IE= -50μA , IC=0  
VCB= -50V , IE=0  
VEB= -4V , IC=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
DC Current Gain  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
V
-0.5  
-0.5  
-0.3  
600  
6.11  
μA  
μA  
V
IEBO  
IC= -5mA , IB= -0.25mA  
VCE= -5V , IC= -1mA  
VCE(sat)  
hFE  
Input Resistance  
100  
Resistance Ratio  
R1  
3.29  
4.7  
KΩ  
VCE= -10V , IE=5mA , f=100MHz  
Transition Frequency  
fT  
250  
MHz  
Version : B13  

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