Datasheet > DTA123JS3

DTA123JS3

更新时间： 2024-01-12 11:27:23

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体数字晶体管
页数	文件大小	规格书
3页	145K
描述
PNP Digital Transistors (Built-in Resistors)

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技术参数
数据手册

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DTA123JS3 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	80
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	Base Number Matches：	1

DTA123JS3 数据手册

Spec. No. : C261S3

Issued Date : 2003.07.21

Revised Date :

CYStech Electronics Corp.

Page No. : 1/3

PNP Digital Transistors (Built-in Resistors)

DTA123JS3

Features

• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

resistors (see equivalent circuit).

• The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the

input. They also have the advantage of almost completely eliminating parasitic effects.

• Only the on/off conditions need to be set for operation, making device design easy.

• Complements the DTC123JS3

Equivalent Circuit

Outline

SOT-323

DTA123JS3

R1=2.2kΩ , R2=47 kΩ

IN(B) : Base

OUT(C) : Collector

GND(E) : Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply Voltage

Input Voltage

V^CC

V^IN

I^O

-50

-12~+5

-100

°C/W

°C

Output Current

I^O(max)

-100

Power Dissipation

200

Thermal Resistance, Junction to Ambient

Junction Temperature

R^θJA

Tstg

625

150

Storage Temperature

-55~+150

°C

DTA123JS3

CYStek Product Specification

12 3

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