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DTA123JE PDF预览

DTA123JE

更新时间: 2024-11-23 04:39:23
品牌 Logo 应用领域
WEITRON 晶体小信号双极晶体管
页数 文件大小 规格书
13页 799K
描述
Bias Resistor Transistor PNP Silicon

DTA123JE 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.08
Base Number Matches:1

DTA123JE 数据手册

 浏览型号DTA123JE的Datasheet PDF文件第2页浏览型号DTA123JE的Datasheet PDF文件第3页浏览型号DTA123JE的Datasheet PDF文件第4页浏览型号DTA123JE的Datasheet PDF文件第5页浏览型号DTA123JE的Datasheet PDF文件第6页浏览型号DTA123JE的Datasheet PDF文件第7页 
DTA114EE Series  
Bias Resistor Transistor PNP Silicon  
3
3
P b  
Lead(Pb)-Free  
COLLECTOR  
1
2
3
R1  
R2  
1
BASE  
SC-89  
(SOT-523F)  
2
EMITTER  
Maximum Ratings (TA=25°C unless otherwise noted)  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
V
50  
V
CEO  
V
CBO  
50  
Collector-Base Voltage  
mA  
I
C
100  
Collector Current-Continuous  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board  
FR-4 Board(1) T =25˚C  
200  
1.6  
mW  
mW/ ˚C  
P
D
A
Derate above 25˚C  
Thermal Resistance, Junction to Ambient(1)  
R
θJA  
600  
˚C/W  
Total Device Dissipation FR-5 Board  
FR-4 Board(2) T =25˚C  
300  
2.4  
mW  
mW/ ˚C  
A
P
D
Derate above 25˚C  
Thermal Resistance, Junction to Ambient(2)  
Junction Temperature Range  
R
400  
˚C/W  
˚C  
θJA  
T
-55 to +150  
-55 to +150  
J
Storage Temperature Range  
Tstg  
˚C  
1.FR-4 @ Minimum pad  
2.FR-4 @1.0 x 1.0 Inch pad  
Device Marking and ResistorValues  
Device  
Marking  
R1(K)  
R2(K)  
Device  
Marking  
R1(K)  
R2(K)  
10  
22  
47  
10  
10  
DTA114EE  
6A  
6B  
6C  
6D  
6E  
6F  
10  
22  
47  
47  
DTA123EE  
6H  
2.2  
2.2  
DTA143EE  
DTA143ZE  
DTA124XE  
DTA123JE  
DTA115EE  
DTA144WE  
43  
6K  
6L  
6M  
6N  
6P  
4.7  
4.7  
22  
2.2  
100  
47  
4.7  
47  
47  
47  
100  
22  
DTA124EE  
DTA144EE  
DTA114YE  
DTA114TE  
DTA143TE  
4.7  
WEITRON  
http://www.weitron.com.tw  
1/13  
12-Jun-06  

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