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DTA115GSATP PDF预览

DTA115GSATP

更新时间: 2024-01-30 16:30:55
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 41K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN

DTA115GSATP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-72包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.6其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):82
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

DTA115GSATP 数据手册

 浏览型号DTA115GSATP的Datasheet PDF文件第2页 
DTA115GUA / DTA115GKA / DTA115GSA  
Transistors  
Digital transistors (built-in resistor)  
DTA115GUA / DTA115GKA / DTA115GSA  
zExternal dimensions (Unit : mm)  
zFeatures  
1) The built-in bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input, and  
parasitic effects are almost completely eliminated.  
2) Only the on / off conditions need to be set for operation,  
making device design easy.  
DTA115GUA  
1.25  
2.1  
3) Higher mounting densities can be achieved.  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
(3) Collector  
zEquivalent circuit  
C
B
R
DTA115GKA  
E
E : Emitter  
C : Collector  
B : Base  
1.6  
2.8  
zAbsolute maximum ratings (Ta=25°C)  
0.3Min.  
Parameter  
Symbol  
Limits  
50  
Unit  
V
Each lead has same dimensions  
Collector-base voltage  
V
V
V
CBO  
CEO  
EBO  
Collector-emitter voltag  
Emitter-base voltage  
Collector current  
50  
V
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
(3) Collector  
5  
V
I
C
100  
200  
mA  
mW  
mW  
°C  
°C  
DTA115GUA / DTA115GKA  
DTA115GSA  
Collector power  
dissipation  
Pc  
300  
DTA115GSA  
4
2
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
0.45  
zPackage, marking, and packaging specifications  
Type  
DTA115GUA  
UMT3  
K19  
DTA115GKA  
DTA115GSA  
Package  
Marking  
SMT3  
SPT  
0.45  
2.5 0.5  
K19  
5
Packaging code  
T106  
T146  
TP  
Basic ordering unit (pieces)  
3000  
3000  
5000  
Taping specifications  
( ) ( ) ( )  
1
2
3
ROHM : SPT  
EIAJ : SC-72  
(1) Emitter  
(2) Collector  
(3) Base  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5  
V
V
I
I
I
C
=−50µA  
=−1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltag  
Emitter-base breakdown voltage  
Collector cutoff current  
C
V
E
=−72µA  
CB=−50V  
EB=−4V  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
58  
0.3  
µA  
µA  
V
V
V
I
Emitter cutoff current  
V
I
I
C=−5mA, I  
B=−0.25mA  
Collector-emitter saturation voltage  
DC current transfer ratio  
h
82  
70  
C=−5mA, VCE=−5V  
R
100  
250  
130  
kΩ  
Emitter-base resistance  
f
T
MHz  
VCE=−10V, IE=5mA, f=100MHz  
Transition frequency  
Transition frequency of the device.  
1/1  

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