Datasheet > DSK18

DSK18

更新时间： 2024-02-09 22:05:39

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	317K
描述
1A Patch Schottky diode 80V SOD-123 series

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中文翻译

获取价格

技术参数
数据手册

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DSK18 技术参数

Case Style：	SOD-123FL	IF（A）：	1.0
Maximum recurrent peak reverse voltage：	80	Peak forward surge current：	20
Maximum instantaneous forward voltage：	0.85	@IF(A)：	1.0
Maximum reverse current：	0.3	TJ(℃）：	/
class：	Diodes

DSK18 数据手册

DSK12 - DSK120

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 200V

CURRENT: 1.0 A

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds,0.37”5(9.5mm) lead length,

5 lbs. (2.3kg) tension

SOD-123FL

Dim Min Max

Typ

3.58 3.72 3.65

2.72 2.78 2.75

1.77 1.83 1.80

1.02 1.08 1.05

0.097 1.03 1.00

0.13 0.17 0.15

0.53 0.57 0.55

Mechanical Data

Case: SOD-123FL

plastic body over passivated junction

Terminals

: Plated axial leads,

Method 2026

solderable per MIL-STD-750,

Polarity

Mounting Position

: Color band denotes cathode end

All Dimensions in mm

: Any

Weight

:0.0007 ounce, 0.02 grams

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

DSK17 DSK18 DSK19 DSK110 DSK115 DSK120

Unit

DSK12 DSK13 DSK14 DSK15 DSK16

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

150

200

V_RRM

105

150

140

200

VRMS

100

Maximum DC blocking voltage

VDC

I(AV)

Maximum average forward rectified current

1.0

Peak forward surge current

IFSM

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

0.55

0.70

0.85

0.95

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

0.2

2.0

TA=100 C

5.0

10.0

Typical junction capacitance (NOTE 1)

110

Operating junction temperature range

Storage temperature range

-65 to +125

-65 to +150

T_J

TSTG

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

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