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DSK115 PDF预览

DSK115

更新时间: 2024-11-30 14:45:55
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 1063K
描述
肖特基二极管

DSK115 技术参数

Case Style:SOD-123FLIF(A):1.0
Maximum recurrent peak reverse voltage:150Peak forward surge current:20
Maximum instantaneous forward voltage:0.85@IF(A):1.0
Maximum reverse current:0.3TJ(℃):/
class:Diodes

DSK115 数据手册

 浏览型号DSK115的Datasheet PDF文件第2页 
DSK12-DSK120  
Surface Mount Schottky Rectifier  
SOD-123FL  
Features  
Low profile package  
Ideal for automated placement  
0.075(1.90)  
0.067(1.70)  
0.043(1.09)  
0.035(0.89)  
Ultrafast reverse recovery time  
Low power losses, high efficiency  
0.114(2.9)  
0.098(2.5)  
Low forward voltage drop  
High surge capability  
0.008(0.20)  
0.004(0.10)  
High temperature soldering  
0.047(1.19)  
0.043(1.09)  
260/10 seconds at terminals  
Component in accordance to  
0.030(0.76)  
0.018(0.45)  
RoHS 2002/95/1 and WEEE 2002/96/EC  
Mechanical Date  
0.154(3.9)  
Case: JEDEC SOD-123FL molded plastic  
0.138(3.5)  
body over passivated chip  
Dimensions in inches and(millimeters)  
Terminals: Solder plated, solderable per  
J-STD-002B and JESD22-B102D  
Polarity: Laser band denotes cathode end  
Maximum Ratings & Thermal Characteristics & Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
SYMBOLS  
DSK17 DSK18 DSK19 DSK110 DSK115 DSK120  
DSK12 DSK13 DSK14 DSK15 DSK16  
UNITS  
MDD Catalog  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
70  
49  
70  
80  
56  
80  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
VRRM  
VRMS  
VDC  
VOLTS  
VOLTS  
VOLTS  
Amp  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
I(AV)  
IFSM  
VF  
1.0  
Peak forward surge current  
25.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
0.55  
110  
0.70  
0.85  
Maximum instantaneous forward voltage at 1.0A  
Volts  
mA  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
0.5  
0.2  
2.0  
IR  
5.0  
80  
TA=100 C  
10.0  
Typical junction capacitance (NOTE 1)  
CJ  
pF  
Operating junction temperature range  
Storage temperature range  
-65 to +125  
-65 to +150  
TJ  
TSTG  
C
C
-65 to +150  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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