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DSK10B PDF预览

DSK10B

更新时间： 2024-09-29 20:50:43
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 30K
描述
Power Rectifier, 1.0 A, 500-BLKBG

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中文翻译

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DSK10B 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：PLASTIC PACKAGE-2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.33外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.1 V
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值正向电流：45 A元件数量：1
端子数量：2最高工作温度：150 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
认证状态：Not Qualified最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：NO
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIALBase Number Matches：1

DSK10B 数据手册

 浏览型号DSK10B的Datasheet PDF文件第2页浏览型号DSK10B的Datasheet PDF文件第3页 
Ordering number : EN2855D  
SANYO Sem iconductors  
DATA S HEET  
Diffused Junction Type Silicon Diode  
Designed for 5mm-pitch Automatic Insertion  
DSK10  
1.0A Power Rectifier  
Features  
•
Designed for 5mm-pitch automatic insertion.  
Small plastic molded structure (3mm body).  
•
• Peak reverse voltage : 100 to 400V.  
• Average output current : 1.0A.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Peak Reverse Voltage  
Symbol  
Conditions  
DSK10B  
100  
DSK10C  
200  
DSK10E  
400  
Unit  
V
V
RM  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
I
1.0  
45  
A
O
I
50Hz sine wave, 1cycle  
A
FSM  
Tj  
150  
°C  
°C  
Tstg  
--40 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.1  
10  
Forward Voltage  
Reverse Current  
V
I =1.0A  
V
F
F
I
V
: At each V  
RM  
µA  
R
R
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82207RC TI IM TC-00000832 / 33103 TS IM TA-4136 / 91001 GI IM / 53098 HA (KT) / 92995 GI (KOTO) / D268 TA, TS No.2855-1/3  
123

中文翻译

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DSK10B 替代型号

型号 品牌 替代类型 描述 数据表
1N4002RLG ONSEMI

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 		暂无描述

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