Datasheet > DSK110-N-Q1

DSK110-N-Q1

更新时间： 2024-10-02 18:06:59

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
3页	1155K
描述
SOD-323

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中文翻译

获取价格

数据手册

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DSK110-N-Q1 数据手册

DSK12-N-Q1 THRU DSK120-N-Q1

1.0A Surface Mount Schottky Barrier

Rectifiers -

20V-200V

Package outline

Features

• Low profile surface mounted application in order to

SOD-323

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

0.071(1.80)

0.063(1.60)

• Guardring for overvoltage protection.

• Very tiny plastic SMD package.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.039(1.00)

0.031(0.80)

Compliant to Halogen-free

•

Suffix "-Q1" for AEC-Q101

0.108(2.75)

0.096(2.45)

Mechanical data

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-323

Dimensions in inches and (millimeters)

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity : Indicated by cathode band

• Mounting Position : Any

Maximum ratings and Electrical characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

Symbol

TYP.

UNIT

MIN.

PARAMETER

CONDITIONS

I_O

1.0

Forward rectified current

See Fig.1

I_FSM

I_R

Forward surge current

Reverse current

8.3ms single half sine-wave (JEDEC methode)

V_R= V_RRMT_J= 25^OC

0.3

^OC

Storage temperature

+150

-55

T_STG

Operating

*1 Repetitive peak reverse voltage

*2 RMS voltage

V_RMS

V_R

V_F

V_RRM

(V)

temperature

SYMBOLS

T_J, (^OC)

(V)

DSK12-N-Q1

DSK14-N-Q1

DSK16-N-Q1

DSK18-N-Q1

DSK110-N-Q1

DSK112-N-Q1

DSK115-N-Q1

DSK120-N-Q1

0.55

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=1.0A

0.70

0.85

0.90

-55 to +125

100

120

150

200

100

120

150

200

105

140

http://www.anbonsemi.com

TEL:+86-755-23776891

FAX:+86-755-81482812

Document ID

Issued Date

Revised Date

Revision

Page.

AS-10600N6

2013/03/08

2022/01/20

Page 1

12 3

中文翻译

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