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DSK10C-ET1 PDF预览

DSK10C-ET1

更新时间: 2024-01-24 00:58:51
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
2页 647K
描述
1.0A Power Rectifier

DSK10C-ET1 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.82外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL

DSK10C-ET1 数据手册

 浏览型号DSK10C-ET1的Datasheet PDF文件第2页 
Ordering number : EN2855E  
DSK10B,DSK10C, DSK10E  
1.0A Power Rectifier  
http://onsemi.com  
Features  
Designed for 5mm-pitch automatic insertion  
Small plastic molded structure (3mm body)  
Peak reverse voltage : 100 to 400V  
Average output current : 1.0A  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Peak Reverse Voltage  
Average Recitifiedd Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Symbol  
Conditions  
DSK10B  
100  
DSK10C  
200  
DSK10E  
400  
Unit  
V
V
RM  
1.0  
45  
A
I
I
O
50Hz sine wave, 1cycle  
A
FSM  
Tj  
150  
°C  
°C  
Tstg  
--40 to +150  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
at Ta=25°C  
Electrical Characteristics  
Value  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
1.1  
10  
Forward Voltage  
Reverse Current  
V
I
I =1.0A  
F
F
V
:At each V  
RM  
A
m
R
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  
indicated by the Electrical Characteristics if operated under different conditions.  
Package Dimensions  
Ordering Information  
unit:mm(typ.)  
Device  
Shipping  
memo  
DSK10B  
500 Unit/Bag  
20.0  
3.0  
20.0  
DSK10B-AT1  
DSK10B-BT  
DSK10C  
3,000 Unit/Box  
3,000 Unit/Box  
500 Unit/Bag  
1
2
0.6φ  
cathode mark  
1 : Cathode  
2 : Anode  
DSK10C-AT1  
DSK10C-BT  
DSK10C-ET1  
DSK10E  
3,000 Unit/Box  
3,000 Unit/Box  
3,000 Unit/Box  
500 Unit/Bag  
Pb-Free  
DSK10E-AT1  
DSK10E-BT  
DSK10E-ET1  
3,000 Unit/Box  
3,000 Unit/Box  
3,000 Unit/Box  
Semiconductor Components Industries, LLC, 2014  
February, 2014  
22414HK TC-00000832/82207TIIM/33103TSIM/91001GIIM  
/53098 HA(KT)/92995GI(KOTO)/D268TA,TS RC No. A2855-1/2  

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