Datasheet > DSF10TL

DSF10TL

更新时间： 2024-11-15 23:49:11

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DSF10TL 数据手册

Ordering number:EN2523A

DSF10T

Diffused Junction Type Silicon Diode

1.0A Power Rectifier

Features

Package Dimensions

unit:mm

· Meets automatic mounting requirements.

· Plastic molded structure (small size).

1004A

· Peak reverse voltage : V =100 to 1000V.

· Average rectified current : I =1.0A.

[DSF10T]

C:Cathode

A:Anode

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Peak Reverse Voltage

Symbol

Conditions

DSF10TB

DSF10TE

DSF10TG

Unit

100

→

400

→

600

Average Rectified Current

Surge Forward Current

Junction Temperature

Storage Temperature

1.0

Ta=25˚C

50Hz sine wave, 1 cycle

→

FSM

150

˚C

→

Tstg

–40 to +150

→

Parameter

Symbol

Conditions

DSF10TL

1000

Unit

Peak Reverse Voltage

Average Rectified Current

Surge Forward Current

Junction Temperature

Storage Temperature

1.0

Ta=25˚C

50Hz sine wave, 1 cycle

FSM

˚C

150

Tstg

–40 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Forward Voltage

Reverse Current

I =1.0A

:At each V

µA

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

53098HA (KT)/92995GI (KOTO)/5178TA, TS No.2523-1/2

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