This product complies with the RoHS Directive (EU 2002/95/EC).
DSC5001
Silicon NPN epitaxial planar type
For general amplification
Complementary to DSA5001
Features
Package
ꢀCode
High forward current transfer ratio hFE with excellent linearity
Eco-friendly Halogen-free package
SMini3-F2-B
ꢀPin Name
1. Base
Packaging
2. Emitter
3. Collector
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Marking Symbol: C1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
50
7
V
V
100
mA
mA
mW
°C
Peak collector current
ICP
200
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
T
stg
–55 to +150
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
ICBO
ICEO
hFE
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
0.1
100
460
0.3
mA
mA
210
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.13
150
V
fT
VCE = 10 V, IC = 2 mA
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.5
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Code
Rank
R
R
S
S
0
No-rank
210 to 460
C1
hFE
210 to 340
C1R
290 to 460
C1S
Marking Symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: November 2009
ZJC00440BED
1