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DSC500100L PDF预览

DSC500100L

更新时间: 2024-11-19 12:28:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 502K
描述
DSC5001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001

DSC500100L 数据手册

 浏览型号DSC500100L的Datasheet PDF文件第2页浏览型号DSC500100L的Datasheet PDF文件第3页浏览型号DSC500100L的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSC5001  
Silicon NPN epitaxial planar type  
For general amplication  
Complementary to DSA5001  
Features  
Package  
Code  
High forward current transfer ratio hFE with excellent linearity  
Eco-friendly Halogen-free package  
SMini3-F2-B  
Pin Name  
1. Base  
Packaging  
2. Emitter  
3. Collector  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
Marking Symbol: C1  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
7
V
V
100  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
200  
Collector power dissipation  
Junction temperature  
PC  
150  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio *  
VCBO IC = 10 mA, IE = 0  
VCEO IC = 2 mA, IB = 0  
VEBO IE = 10 mA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = 20 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = 10 V, IC = 2 mA  
0.1  
100  
460  
0.3  
mA  
mA  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 100 mA, IB = 10 mA  
0.13  
150  
V
fT  
VCE = 10 V, IC = 2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
1.5  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classication  
*
Code  
Rank  
R
R
S
S
0
No-rank  
210 to 460  
C1  
hFE  
210 to 340  
C1R  
290 to 460  
C1S  
Marking Symbol  
Product of no-rank is not classied and have no marking symbol for rank.  
Publication date: November 2009  
ZJC00440BED  
1

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