DSC5002
Silicon NPN epitaxial planar type
For general amplification
Complementary to DSA5002
DSC2002 in SMini3 type package
Unit: mm
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C2
Packaging
DSC5002×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
1: Base
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
2: Emitter
3: Collector
Panasonic
JEITA
60
50
V
SMini3-F2-B
SC-85
5
500
V
Code
mA
A
Peak collector current
ICP
1
Collector power dissipation
Junction temperature
PC
150
mW
°C
°C
°C
Tj
150
Operating ambient temperature
Storage temperature
Topr
–40 to +85
–55 to +150
T
stg
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
ICBO
VCB = 20 V, IE = 0
0.1
mA
2
*
hFE1
hFE2
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
120
40
340
1
Forward current transfer ratio *
1
Collector-emitter saturation voltage *
VCE(sat) IC = 300 mA, IB = 30 mA
0.1
0.6
V
Transition frequency
fT
VCE = 10 V, IC = 50 mA
160
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.8
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Code
Rank
R
R
S
S
0
No-rank
120 to 340
C2
hFE1
120 to 240
C2R
170 to 340
C2S
Marking Symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2014
Ver. EED
1