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DSA5G01B PDF预览

DSA5G01B

更新时间： 2024-11-05 21:02:03
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 539K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN

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DSA5G01B 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.73最大集电极电流 (IC)：0.03 A
集电极-发射极最大电压：20 V配置：SINGLE
最小直流电流增益 (hFE)：70JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：300 MHz
Base Number Matches：1

DSA5G01B 数据手册

 浏览型号DSA5G01B的Datasheet PDF文件第2页浏览型号DSA5G01B的Datasheet PDF文件第3页浏览型号DSA5G01B的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA5G01  
Silicon NPN epitaxial planar type  
For high-frequency amplification  
DSA2G01 in SMini3 type package  
Package  
ꢀCode  
Features  
High forward current transfer ratio hFE with excellent linearity  
High transition frequency fT  
SMini3-F2-B  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀPin Name  
1. Base  
2. Emitter  
3. Collector  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: A4  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–30  
Unit  
V
–20  
V
–5  
V
–30  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
PC  
150  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Base-emitter voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VBE  
ICBO  
ICEO  
IEBO  
hFE  
VCE = –10 V, IC = –1 mA  
VCB = –10 V, IE = 0  
– 0.7  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
– 0.1  
–100  
–10  
µA  
µA  
µA  
VCE = –20 V, IB = 0  
VEB = –5 V, IC = 0  
VCE = –10 V, IC = –1 mA  
70  
220  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –10 mA, IB = –1 mA  
– 0.1  
300  
V
fT  
VCE = –10 V, IC = –1 mA  
150  
MHz  
Reverse transfer capacitance  
(Common emitter)  
Cre  
VCE = –10 V, IC = –1 mA, f = 10.7 MHz  
1.0  
pF  
Noise figure  
NF  
Zrb  
VCE = –10 V, IC = –1 mA, f = 5 MHz  
VCE = –10 V, IC = –1 mA, f = 2 MHz  
2.8  
22  
dB  
Reverse transfer impedance  
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Code  
Rank  
B
B
C
C
0
No-rank  
70 to 220  
A4  
hFE  
70 to 140  
A4B  
110 to 220  
A4C  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: January 2011  
Ver. BED  
1
1234

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