DSA120C150QB

更新时间： 2024-09-24 12:31:19

品牌	Logo	应用领域
IXYS		肖特基二极管
页数	文件大小	规格书
4页	118K
描述
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

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数据手册

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DSA120C150QB 数据手册

DSA 120 C 150 QB

V_RRM

I_FAV= 2x

V_F

150 V

Schottky Diode Gen ²

High Performance Schottky Diode

Low Loss and Soft Recovery

Common Cathode

0.80 V

Part number

DSA 120 C 150 QB

Backside: cathode

Features / Advantages:

Applications:

Package:

● Very low Vf

● Extremely low switching losses

● low Irm values

● Improved thermal behaviour

● High reliability circuit operation

● Low voltage peaks for reduced

protection circuits

● Rectifiers in switch mode power

supplies (SMPS)

● Free wheeling diode in low voltage

converters

● Housing: TO-3P

●rIndustry standard outline

●r compatible with TO-247

●rEpoxy meets UL 94V-0

●rRoHS compliant

● Low noise switching

R a t i n g s

min. typ. max.

150

Conditions

Unit

Symbol

V_RRM

I_R

Definition

T_VJ

max. repetitive reverse voltage

reverse current

25°C

V_R= 150V

1.8 mA

T_VJ= 125°C

T_VJ25°C

0.93

1.13

0.80

1.03

forward voltage

V_F

I_F

60A

120A

60A

T_VJ= 125°C

120A

I_FAV

V_F0

r_F

T_C= 150°C

T_VJ= 175°C

average forward current

threshold voltage

rectangular

d = 0.5

0.51

3.9

for power loss calculation only

slope resistance

thermal resistance junction to case

R_thJC

T_VJ

P_tot

I_FSM

C_J

0.40 K/W

-55

175

375

600

°C

virtual junction temperature

total power dissipation

max. forward surge current

junction capacitance

T_C

25°C

45°C

25°C

T_VJ

t = 10 ms (50 Hz), sine

V_R= 24 V; f = 1 MHz

481

IXYS reserves the right to change limits, conditions and dimensions.

20100219a

Data according to IEC 60747and per diode unless otherwise specified

12 3 4

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