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DS4510 PDF预览

DS4510

更新时间: 2024-01-10 15:20:31
品牌 Logo 应用领域
美信 - MAXIM 存储监控
页数 文件大小 规格书
12页 580K
描述
CPU Supervisor with Nonvolatile Memory and Programmable I/O

DS4510 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:TSSOP,针数:10
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:12 weeks
风险等级:5.68Is Samacsys:N
可调阈值:YES模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:R-PDSO-G10JESD-609代码:e3
长度:3 mm湿度敏感等级:1
信道数量:1功能数量:1
端子数量:10最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

DS4510 数据手册

 浏览型号DS4510的Datasheet PDF文件第1页浏览型号DS4510的Datasheet PDF文件第2页浏览型号DS4510的Datasheet PDF文件第4页浏览型号DS4510的Datasheet PDF文件第5页浏览型号DS4510的Datasheet PDF文件第6页浏览型号DS4510的Datasheet PDF文件第7页 
CPU Supervisor with Nonvolatile Memory and  
Programmable I/O  
CPU SUPERVISOR AC ELECTRICAL CHARACTERISTICS (See Figure 1)  
(V  
= 2.7V to 5.5V, T = -40°C to +85°C.)  
A
CC  
PARAMETER  
SYMBOL  
CONDITIONS  
TD1= 0, TD0 = 0  
MIN  
112  
225  
450  
900  
112  
225  
450  
900  
TYP  
125  
250  
500  
1000  
125  
250  
500  
1000  
4
MAX  
138  
275  
550  
1100  
138  
275  
550  
1100  
10  
UNITS  
TD1= 0, TD0 = 1  
TD1= 1, TD0 = 0  
TD1= 1, TD0 = 1  
TD1= 0, TD0 = 0  
TD1= 0, TD0 = 1  
TD1= 1, TD0 = 0  
TD1= 1, TD0 = 1  
RST Active Time  
t
ms  
RST  
V
V
Detect to RST  
Fail to RST  
t
t
ms  
µs  
CC  
CC  
RPU  
RPD  
AC ELECTRICAL CHARACTERISTICS (See Figure 5)  
(V  
= 2.7V to 5.5V, T = -40°C to +85°C, timing referenced to V  
IL(MAX)  
and V .)  
IH(MIN)  
CC  
A
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
SCL Clock Frequency  
f
(Note 6)  
0
400  
kHz  
SCL  
Bus Free Time Between Stop and  
Start Conditions  
t
1.3  
0.6  
µs  
µs  
BUF  
Hold Time (Repeated) Start  
Condition  
t
HD:STA  
Low Period of SCL  
High Period of SCL  
Data Hold Time  
t
1.3  
0.6  
µs  
µs  
µs  
ns  
µs  
ns  
ns  
µs  
LOW  
t
HIGH  
t
0
0.9  
HD:DAT  
Data Setup Time  
t
100  
SU:DAT  
Start Setup time  
t
0.6  
SU:STA  
SDA and SCL Rise Time  
SDA and SCL Fall Time  
Stop Setup Time  
t
(Note 7)  
(Note 7)  
20 + 0.1C  
20 + 0.1C  
0.6  
300  
300  
R
B
t
F
B
t
SU:STO  
SDA and SCL Capacitive  
Loading  
C
(Note 7)  
(Note 7)  
400  
20  
pF  
B
EEPROM Write Time  
t
10  
ms  
W
_____________________________________________________________________  
3

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