Datasheet > DS3922

DS3922

更新时间： 2024-11-10 14:58:03

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
11页	347K
描述
High-Speed Current Mirror and Integrated FETs for DC-DC Controller

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中文翻译

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DS3922 数据手册

EVALUATION KIT AVAILABLE

DS3922

High-Speed Current Mirror and

Integrated FETs for DC-DC Controller

General Description

Beneﬁts and Features

● Accurate Burst-Mode RSSI Measurement with Two

The DS3922 high-speed current mirror integrates high-

voltage devices necessary for monitoring the burst mode

receive power signal in avalanche photodiode (APD) bias-

ing and OLT applications. The device has two small and

one large gain current mirror outputs to monitor the APD

current. An adjustable current clamp limits current through

the APD. The clamp also features an external shutdown.

An integrated FET is also provided that can be used to

quickly clamp the high-voltage bias to ground in the case

of high optical input power. Integrated low-voltage FET

circuits can be used to create buck, boost, and inverting

DC-DC converters for efficient laser bias and EML bias

applications.

Current Mirror Outputs Improves Dynamic Range

• -32dBm to -5dBm Optical Input Range

• ±0.5dB Accuracy

• Sampling Period as Short as 300ns

• Pin Discharge Option

● Low-Noise APD Bias with Shutdown Options

Reduces Receiver Sensitivity

• 15V to 76V APD Bias

• External Capacitor Connection for Controlled RC

Time Constant of APD Voltage Filter

• Current Clamp with Adjustable Limit and External

Shutdown with Limit Status

The DS3922 is available in a 24-pin TQFN package and

operates over an extended -40°C to +95°C temperature

range.

• High-Voltage Switch FET for APD Fast Shutdown

● Supports Additional DC-DC Functions

• Low-Voltage Synchronous Buck FETs for Efficient

DFB Bias

Block Diagram

• Low-Voltage pMOSFET for Generating Negative

Bias Voltage for EMLs

LOW-VOLTAGE

DS3922

FET CIRCUITS

● Small Package Reduces Total Solution Size and Cost

LVCC

AVCC

(2.85V TO 3.63V)

• 3.5mm x 3.5mm, 24-Pin TQFN Package with

Exposed Pad

(WITHIN ±0.1V OF

HVGND AND GND)

HIGH-VOLTAGE

AND MIRROR CIRCUITS

MIRIN

LVGND

AVCC

0.8I

0.2I

0.1I

Applications

●ꢀ AvalancheꢀPhotodiodeꢀ(APD)ꢀMonitoring

●ꢀ GPONꢀOLT

●ꢀ 10GPONꢀOLT

●ꢀ EMLꢀBias

MIRCAP

HIGH-POWER DML,

DFB, LDD, TXVCC

LVOUT3

(0 TO 4V)

OPEN-DRAIN nMOS

LVCC

ILIMS

RLIM

CURRENT

LIMIT

LVGND

LVIN3

200µA

●ꢀ 10GꢀEPON

TEMP

LIMIT

EML NEGATIVE BIAS INVERTING SWITCHER LVIN2

LVCC

ISRC/SHDN

Ordering Information appears at end of data sheet.

pMOS

1.8V

LVOUT2

(-3.7V TO LVCC)

OPEN-DRAIN pMOS

AVCC

LVGND

MIROUT

APDV

MIRIN

0.5V/V

For related parts and recommended products to use with this part, refer

to www.maximintegrated.com/DS3922.related.

EML, DFB, APC HIGH-EFFICIENCY BIAS LVIN1

LVCC LVCC

MIROUT

GND

HVD

pMOS

HVGND

HVG

LVOUT1

(0 TO LVCC)

NONOVERLAP

DRIVER

nMOS

LVGND

19-7400; Rev 1; 3/15

12 3 4 5 6 7...11

中文翻译

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