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DS1855E-050/R PDF预览

DS1855E-050/R

更新时间: 2024-02-11 10:58:28
品牌 Logo 应用领域
达拉斯 - DALLAS 电位器存储
页数 文件大小 规格书
20页 252K
描述
Dual Nonvolatile Digital Potentiometer and Secure Memory

DS1855E-050/R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.35
其他特性:NONVOLATILE MEMORY; OTHER RESISTOR VALUE IS 10000 OHM WITH 100 TAP POSITION标称带宽:1 kHz
控制接口:2-WIRE SERIAL转换器类型:DIGITAL POTENTIOMETER
JESD-30 代码:R-PDSO-G14JESD-609代码:e3
长度:5 mm湿度敏感等级:1
功能数量:2位置数:256
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified电阻定律:LINEAR
最大电阻容差:20%最大电阻器端电压:3.3 V
最小电阻器端电压:-0.3 V座面最大高度:1.1 mm
子类别:Digital Potentiometers标称供电电压:3 V
表面贴装:YES标称温度系数:750 ppm/ °C
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称总电阻:50000 Ω宽度:4.4 mm
Base Number Matches:1

DS1855E-050/R 数据手册

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DS1855  
FBh – FCh  
Lock Bytes  
Writing to these two bytes allows the user to lock or unlock the  
memory described in byte FAh.  
LOCK: If memory location FBh is written to 56h and memory  
location FCh is written to 25h, the device will enter lock mode.  
Write protection will become active in the memory locations that  
are specified in FAh.  
UNLOCK: If memory location FBh is written to 67h and memory  
location FCh is written to 36h, the device will be unlocked. Once  
unlocked, the user can change the setting of memory location FAh  
to affect the EEPROM write-protection.  
The locking can be updated at any time as long as the upper  
page is unlocked.  
FD – FFh  
Reserved  
Reserved  
5 of 20  

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