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DS1855E-020/R PDF预览

DS1855E-020/R

更新时间: 2024-01-26 07:08:57
品牌 Logo 应用领域
达拉斯 - DALLAS 电位器存储
页数 文件大小 规格书
20页 252K
描述
Dual Nonvolatile Digital Potentiometer and Secure Memory

DS1855E-020/R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.36
Is Samacsys:N其他特性:NONVOLATILE MEMORY; OTHER RESISTOR VALUE IS 10000 OHM WITH 100 TAP POSITION
标称带宽:1 kHz控制接口:2-WIRE SERIAL
转换器类型:DIGITAL POTENTIOMETERJESD-30 代码:R-PDSO-G14
JESD-609代码:e0长度:5 mm
湿度敏感等级:1功能数量:2
位置数:256端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):240
电源:3/5 V认证状态:Not Qualified
电阻定律:LINEAR最大电阻容差:20%
最大电阻器端电压:3.3 V最小电阻器端电压:-0.3 V
座面最大高度:1.1 mm子类别:Digital Potentiometers
标称供电电压:3 V表面贴装:YES
标称温度系数:750 ppm/ °C温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称总电阻:20000 Ω
宽度:4.4 mmBase Number Matches:1

DS1855E-020/R 数据手册

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DS1855  
FBh – FCh  
Lock Bytes  
Writing to these two bytes allows the user to lock or unlock the  
memory described in byte FAh.  
LOCK: If memory location FBh is written to 56h and memory  
location FCh is written to 25h, the device will enter lock mode.  
Write protection will become active in the memory locations that  
are specified in FAh.  
UNLOCK: If memory location FBh is written to 67h and memory  
location FCh is written to 36h, the device will be unlocked. Once  
unlocked, the user can change the setting of memory location FAh  
to affect the EEPROM write-protection.  
The locking can be updated at any time as long as the upper  
page is unlocked.  
FD – FFh  
Reserved  
Reserved  
5 of 20  

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