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DS08MB200TSQX/NOPB PDF预览

DS08MB200TSQX/NOPB

更新时间: 2024-01-28 05:48:12
品牌 Logo 应用领域
德州仪器 - TI 驱动接口集成电路复用器驱动器
页数 文件大小 规格书
15页 431K
描述
双路 800Mbps 2:1/1:2 LVDS 多路复用器/缓冲器 | RHS | 48 | -40 to 85

DS08MB200TSQX/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN, LCC48,.27SQ,20针数:48
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:1.25差分输出:YES
驱动器位数:2高电平输入电流最大值:0.00001 A
输入特性:DIFFERENTIAL SCHMITT TRIGGER接口集成电路类型:LINE TRANSCEIVER
接口标准:GENERAL PURPOSEJESD-30 代码:S-XQCC-N48
JESD-609代码:e3长度:7 mm
湿度敏感等级:3功能数量:2
端子数量:48最高工作温度:85 °C
最低工作温度:-40 °C输出极性:TRUE
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC48,.27SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
最大接收延迟:2.5 ns接收器位数:2
座面最大高度:0.8 mm子类别:Other Interface ICs
最大压摆率:275 mA最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
电源电压1-最大:3.6 V电源电压1-分钟:3 V
电源电压1-Nom:3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED最大传输延迟:2.5 ns
宽度:7 mm

DS08MB200TSQX/NOPB 数据手册

 浏览型号DS08MB200TSQX/NOPB的Datasheet PDF文件第3页浏览型号DS08MB200TSQX/NOPB的Datasheet PDF文件第4页浏览型号DS08MB200TSQX/NOPB的Datasheet PDF文件第5页浏览型号DS08MB200TSQX/NOPB的Datasheet PDF文件第7页浏览型号DS08MB200TSQX/NOPB的Datasheet PDF文件第8页浏览型号DS08MB200TSQX/NOPB的Datasheet PDF文件第9页 
DS08MB200  
SNLS197D MAY 2006REVISED MARCH 2013  
www.ti.com  
ELECTRICAL CHARACTERISTICS (continued)  
Over recommended operating supply and temperature ranges unless other specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ(1)  
1.3  
Max  
1.5  
34  
Units  
psrms  
psp-p  
psp-p  
tJIT  
Jitter(5)  
RJ - Alternating 1 and 0 at 400 MHz(6)  
DJ - K28.5 Pattern, 800 Mbps(7)  
TJ - PRBS 27-1 Pattern, 800 Mbps(8)  
15  
16  
34  
tON  
LVDS Output Enable Time  
Time from ENA_n, ENB_n, or ENL_n to  
OUT± change from TRI-STATE to active.  
0.5  
10  
1.5  
20  
µs  
µs  
tON2  
tOFF  
LVDS Output Enable time from  
powerdown mode  
Time from ENA_n, ENB_n, or ENL_n to  
OUT± change from Powerdown to active  
LVDS Output Disable Time  
Time from ENA_n, ENB_n, or ENL_n to  
OUT± change from active to TRI-STATE  
or powerdown.  
12  
ns  
(5) Jitter is not production tested, but ensured through characterization on a sample basis.  
(6) Random Jitter, or RJ, is measured RMS with a histogram including 1500 histogram window hits. The input voltage = VID = 500mV, 50%  
duty cycle at 400 MHz, tr = tf = 50ps (20% to 80%).  
(7) Deterministic Jitter, or DJ, is measured to a histogram mean with a sample size of 350 hits. Stimulus and fixture jitter has been  
subtracted. The input voltage = VID = 500mV, K28.5 pattern at 800 Mbps, tr = tf = 50ps (20% to 80%). The K28.5 pattern is repeating bit  
streams of (0011111010 1100000101).  
(8) Total Jitter, or TJ, is measured peak to peak with a histogram including 3500 window hits. Stimulus and fixture jitter has been subtracted.  
The input voltage = VID = 500mV, 27-1 PRBS pattern at 800 Mbps, tr = tf = 50ps (20% to 80%).  
6
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Product Folder Links: DS08MB200  

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