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DRAQA23E PDF预览

DRAQA23E

更新时间： 2024-11-25 21:14:39
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 250K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, USSMINI3-F1-B, 3 PIN

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DRAQA23E 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.78其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.08 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：6
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.1 W子类别：BIP General Purpose Small Signal
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DRAQA23E 数据手册

 浏览型号DRAQA23E的Datasheet PDF文件第2页浏览型号DRAQA23E的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRAQA23E  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRCQA23E  
DRA3123E in USSMini3 type package  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
USSMini3-F1-B  
ꢀPin Name  
1: Base  
2: Emitter  
Packaging  
3: Collector  
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
ꢀMarking Symbol: G3  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
C
E
R1  
B
–50  
V
R2  
–80  
mA  
mW  
°C  
Total power dissipation  
PT  
100  
R1  
R2  
2.2  
2.2  
kΩ  
kΩ  
Resistance value  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
–2.0  
20  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
6
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.30  
–1.8  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
2.2  
1.0  
kΩ  
Resistance ratio  
R1 / R2  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: May 2011  
Ver. AED  
1
123

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