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DP8522AV-25 PDF预览

DP8522AV-25

更新时间: 2024-10-02 02:56:31
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动器微控制器和处理器内存控制器外围集成电路动态存储器时钟
页数 文件大小 规格书
70页 855K
描述
DP8520A/DP8521A/DP8522A microCMOS Programmable 256k/1M/4M Video RAM Controller/Drivers

DP8522AV-25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QCCJ, LDCC84,1.2SQReach Compliance Code:unknown
风险等级:5.7Is Samacsys:N
地址总线宽度:24边界扫描:NO
最大时钟频率:25 MHz外部数据总线宽度:
JESD-30 代码:S-PQCC-J84JESD-609代码:e0
长度:29.21 mm低功率模式:YES
内存组织:4M X 1区块数量:4
端子数量:84最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC84,1.2SQ
封装形状:SQUARE封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:4.57 mm
子类别:Memory Controllers最大压摆率:95 mA
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:29.21 mm
uPs/uCs/外围集成电路类型:MEMORY CONTROLLER, DRAMBase Number Matches:1

DP8522AV-25 数据手册

 浏览型号DP8522AV-25的Datasheet PDF文件第2页浏览型号DP8522AV-25的Datasheet PDF文件第3页浏览型号DP8522AV-25的Datasheet PDF文件第4页浏览型号DP8522AV-25的Datasheet PDF文件第5页浏览型号DP8522AV-25的Datasheet PDF文件第6页浏览型号DP8522AV-25的Datasheet PDF文件第7页 
PRELIMINARY  
May 1992  
DP8520A/DP8521A/DP8522A microCMOS Programmable  
256k/1M/4M Video RAM Controller/Drivers  
General Description  
Features  
Y
On chip high precision delay line to guarantee critical  
VRAM access timing parameters  
The DP8520A/21A/22A video RAM controllers provide a  
low cost, single chip interface between video RAM and all  
8-, 16- and 32-bit systems. The DP8520A/21A/22A gener-  
ate all the required access control signal timing for VRAMs.  
An on-chip refresh request clock is used to automatically  
refresh the VRAM array. Refreshes and accesses are arbi-  
trated on chip. If necessary, a WAIT or DTACK output in-  
serts wait states into system access cycles, including burst  
mode accesses. RAS low time during refreshes and RAS  
precharge time after refreshes and back to back accesses  
are guaranteed through the insertion of wait states. Sepa-  
rate on-chip precharge counters for each RAS output can  
be used for memory interleaving to avoid delayed back to  
back accesses because of precharge. An additional feature  
of the DP8522A is two access ports to simplify dual access-  
ing. Arbitration among these ports and refresh is done on  
chip.  
Y
microCMOS process for low power  
Y
High capacitance drivers for RAS, CAS, DT/OE and  
VRAM address on chip  
Y
On chip support for nibble, page and static column  
VRAMs  
Y
Byte enable signals on chip allow byte writing in a word  
size up to 16 bits with no external logic  
Y
Selection of controller speeds: 20 MHz and 25 MHz  
Y
On board Port A/Port B (DP8522A only)/refresh arbitra-  
tion logic  
Y
Direct interface to all major microprocessors (applica-  
tion notes available)  
Y
4 RAS and 4 CAS drivers (the RAS and CAS configura-  
tion is programmable)  
Largest  
VRAM  
Direct Drive  
Memory  
Access  
Ports  
Ý
Ý
of Pins  
of Address  
Outputs  
Control  
(PLCC)  
Possible  
Capacity  
Available  
DP8520A  
DP8521A  
DP8522A  
68  
68  
84  
9
256 kbit  
1 Mbit  
4 Mbit  
4 Mbytes  
16 Mbytes  
64 Mbytes  
Single Access Port  
10  
11  
Single Access Port  
Dual Access Ports (A and B)  
Block Diagram  
DP8520A/21A/22A VRAM Controller  
TL/F/9338–5  
FIGURE 1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
PALÉ is a registered trademark of and is used under license from Monolithic Memories, Inc.  
C
1995 National Semiconductor Corporation  
TL/F/9338  
RRD-B30M105/Printed in U. S. A.  

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