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DP83640TVVX/NOPB PDF预览

DP83640TVVX/NOPB

更新时间: 2024-01-25 19:15:13
品牌 Logo 应用领域
德州仪器 - TI 网络接口电信集成电路电信电路以太网:16GBASE-T
页数 文件大小 规格书
137页 1347K
描述
DP83640 Precision PHYTER - IEEE 1588 Precision Time Protocol Transceiver

DP83640TVVX/NOPB 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:GREEN, PLASTIC, LQFP-48
Reach Compliance Code:compliantECCN代码:5A991.B.1
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.48Is Samacsys:N
数据速率:100000 MbpsJESD-30 代码:S-PQFP-G48
JESD-609代码:e3长度:7 mm
湿度敏感等级:3功能数量:1
端子数量:48收发器数量:1
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP48,.35SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm子类别:Network Interfaces
标称供电电压:3.3 V表面贴装:YES
技术:CMOS电信集成电路类型:ETHERNET TRANSCEIVER
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

DP83640TVVX/NOPB 数据手册

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DP83640  
SNOSAY8E SEPTEMBER 2007REVISED APRIL 2013  
www.ti.com  
1.3 Description  
The DP83640 Precision PHYTER™ device delivers the highest level of precision clock synchronization for  
real time industrial connectivity based on the IEEE 1588 standard. The DP83640 has deterministic, low  
latency and allows choice of microcontroller with no hardware customization required. The integrated 1588  
functionality allows system designers the flexibility and precision of a close to the wire timestamp. The  
three key 1588 features supported by the device are:  
Packet time stamps for clock synchronization  
Integrated IEEE 1588 synchronized clock generation  
Synchronized event triggering and time stamping through GPIO  
DP83640 offers innovative diagnostic features unique to Texas Instruments, including dynamic monitoring  
of link quality during standard operation for fault prediction. These advanced features allow the system  
designer to implement a fault prediction mechanism to detect and warn of deteriorating and changing link  
conditions. This single port fast Ethernet transceiver can support both copper and fiber media.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
2
Introduction  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
Product Folder Links: DP83640  
 

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