DMTH84M1SPS
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
VGS = 6.0V, ID = 20A
ID = 1mA
ID = 250μA
VGS = 10V, ID = 20A
0.8
0.6
-50 -25
0
25 50 75 100 125 150 175
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
Figure 7. On-Resistance Variation with Temperature
100000
10000
1000
100
30
25
20
15
10
5
VGS = 0V
f=1MHz
Ciss
Coss
TA= 175℃
TA= 85℃
TA= 25℃
TA= -55℃
TA= 150℃
TA= 125℃
10
Crss
1
0
0
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
60
80
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
RDS(ON)
LIMITED
PW=1μs
PW=10μs
PW=100μs
PW=1ms
PW=10ms
PW=100ms
DC
6
1
4
VDS = 40V, ID = 20A
TJ(MAX)=175℃
TC=25℃
0.1
0.01
2
Single Pulse
DUT on infinite heatsink
VGS=10V
0
0.1
1
10
100
0
10
20
30
40
Qg (nC)
Figure 11. Gate Charge
50
60
70
80
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
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December 2019
© Diodes Incorporated
DMTH84M1SPS
Document number: DS41438 Rev. 2 - 2