DMTH84M1SPS
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
80
Unit
V
Gate-Source Voltage
±20
V
VGSS
TC = +25C
TC = +100C
(Note 11)
100
100
Steady
State
A
Continuous Drain Current, VGS = 10V (Note 7)
ID
Maximum Continuous Body Diode Forward Current (Note 7)
83
400
400
23
A
A
IS
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
IDM
ISM
IAS
EAS
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH (Note 8)
A
A
Avalanche Energy, L = 1mH (Note 8)
264.5
mJ
Thermal Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
1.6
96
W
°C/W
W
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
PD
RJA
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
2.8
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
53
°C/W
W
RJA
PD
136
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
1.1
°C/W
°C
RJC
TJ, TSTG
-55 to +175
Electrical Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
80
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
Gate-Source Leakage
μA
nA
VDS = 64V, VGS = 0V
VGS = ±20V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
2
—
4
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 6V, ID = 20A
VGS = 0V, IS = 20A
—
—
—
3.1
4.4
0.8
4
Static Drain-Source On-Resistance
5.7
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4209
1513
62
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 40V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
2.2
41
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 6V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
63
Qg
nC
ns
VDS = 40V, ID = 20A
17
Qgs
Qgd
tD(ON)
tR
16
Gate-Drain Charge
16
Turn-On Delay Time
24
Turn-On Rise Time
VDD = 40V, VGS = 10V,
ID = 20A, RG = 6Ω
53
Turn-Off Delay Time
tD(OFF)
tF
31
Turn-Off Fall Time
56
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
IS = 20A, di/dt = 100A/μs
100
nC
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C .
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
11. Package limited.
2 of 7
www.diodes.com
December 2019
© Diodes Incorporated
DMTH84M1SPS
Document number: DS41438 Rev. 2 - 2
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