Datasheet > DMTH6016LK3

DMTH6016LK3

更新时间： 2023-12-06 20:10:58

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描述
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH6016LK3 数据手册

DMTH6016LK3

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

V_GSS

T_A= +25C

Continuous Drain Current (Note 5) V_GS= 10V

T_A= +100C

T_C= +25C

Continuous Drain Current (Note 6) V_GS= 10V

T_C= +100C

10.8

7.6

I_D

46.9

33.2

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)

Avalanche Current, L=0.1mH

I_S

I_DM

I_AS

E_AS

15.3

11.7

Avalanche Energy, L=0.1mH

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation (Note 5)

Symbol

Value

3.2

Unit

P_D

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

2.5

°C/W

°C

R_

-55 to +175

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 1mA

V_DS= 48V, V_GS= 0V

μA

±100

I_GSS

V_GS= ±20V, V_DS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 10A

V_GS= 4.5V, I_D= 6A

V_GS= 0V, I_S= 1A

0.9

1.2

mΩ

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

864

282

27.1

1.35

C_iss

C_oss

C_rss

R_g

V_DS= 30V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Ω

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 10V)

Total Gate Charge (V_GS= 4.5V)

Gate-Source Charge

Q_g

8.4

Q_g

V_DS= 30V, I_D= 10A

3.1

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

4.3

Turn-On Delay Time

3.4

Turn-On Rise Time

5.2

V_DD= 30V, V_GS= 10V,

R_G= 6Ω, I_D= 10A

Turn-Off Delay Time

12.9

6.8

t_D(OFF)

t_F

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_RR

I_F= 10A, di/dt = 400A/μs

11.1

Q_RR

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

April 2018

DMTH6016LK3

Document number: DS38738 Rev. 2 - 2

123 4 5 6 7

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