Datasheet > DMTH4008LFDFWQ

DMTH4008LFDFWQ

更新时间： 2023-12-06 20:10:58

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	367K
描述
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMTH4008LFDFWQ 数据手册

DMTH4008LFDFWQ

0.025

0.02

0.015

0.01

0.005

2.4

2.2

I_D= 1mA

1.8

1.6

1.4

1.2

V_GS= 4.5V, I_D= 8.5A

I_D= 250μA

V_GS= 10V, I_D= 10A

0.8

0.6

0.4

-50 -25

75 100 125 150 175

-50 -25

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

f=1MHz

V_GS= 0V

C_iss

1000

100

C_oss

T_A= 85℃

C_rss

T_A= 125℃

T_A= 25℃

T_A= 150℃

T_A= 175℃

T_A= -55℃

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

100

R_DS(ON)Limited

P_W=100µs

P_W=1ms

P_W=10ms

V_DS= 20V, I_D= 10A

P_W=100ms

P_W=1s

0.1

0.01

T_J(Max)= 175℃ T_C= 25℃

Single Pulse

DUT on 1*MRP Board

V_GS= 10V

P_W=10s

0.01

0.1

100

Qg (nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

4 of 7

www.diodes.com

January 2018

DMTH4008LFDFWQ

Datasheet number: DS39771 Rev. 3 - 2

1 2 345 6 7

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