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DMTH4008LFDFWQ PDF预览

DMTH4008LFDFWQ

更新时间: 2023-12-06 20:10:58
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 367K
描述
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

DMTH4008LFDFWQ 数据手册

 浏览型号DMTH4008LFDFWQ的Datasheet PDF文件第1页浏览型号DMTH4008LFDFWQ的Datasheet PDF文件第2页浏览型号DMTH4008LFDFWQ的Datasheet PDF文件第4页浏览型号DMTH4008LFDFWQ的Datasheet PDF文件第5页浏览型号DMTH4008LFDFWQ的Datasheet PDF文件第6页浏览型号DMTH4008LFDFWQ的Datasheet PDF文件第7页 
DMTH4008LFDFWQ  
30  
25  
20  
15  
10  
5
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
VGS = 4.0V  
VGS = 4.5V  
VGS = 6.0V  
VDS = 5.0V  
VGS = 10.0V  
VGS = 3.5V  
TJ=125℃  
TJ=150℃  
TJ=85℃  
TJ=25℃  
VGS = 3.0V  
TJ=175℃  
VGS=2.8V  
TJ=-55℃  
0
0.0  
1
1.5  
2
2.5  
3
3.5  
4
0
0.5  
1
1.5  
2
2.5  
3
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. Typical Output Characteristic  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 2. Typical Transfer Characteristic  
0.2  
0.15  
0.1  
0.020  
0.018  
0.016  
0.014  
0.012  
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
VGS = 4.5V  
VGS = 10V  
0.05  
0
ID = 10A  
0
5
10  
15  
20  
25  
30  
0
4
8
12  
16  
20  
ID, DRAIN-SOURCE CURRENT (A)  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 4. Typical Transfer Characteristic  
Figure 3. Typical On-Resistance vs. Drain Current and  
Gate Voltage  
0.018  
0.016  
0.014  
0.012  
0.01  
2.2  
2
VGS = 10V  
1.8  
1.6  
1.4  
1.2  
1
150℃  
175℃  
VGS = 10V, ID = 10A  
125℃  
85℃  
VGS = 4.5V, ID = 8.5A  
25℃  
0.008  
0.006  
0.004  
0.8  
0.6  
0.4  
-55℃  
-50 -25  
0
25  
50  
75 100 125 150 175  
0
5
10  
15  
20  
25  
30  
ID, DRAIN CURRENT (A)  
TJ, JUNCTION TEMPERATURE ()  
Figure 5. Typical On-Resistance vs. Drain Current and  
Temperature  
Figure 6. On-Resistance Variation with Temperature  
3 of 7  
www.diodes.com  
January 2018  
© Diodes Incorporated  
DMTH4008LFDFWQ  
Datasheet number: DS39771 Rev. 3 - 2  

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