Datasheet > DMTH10H015LPS

DMTH10H015LPS

更新时间： 2023-12-06 20:11:14

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	745K
描述
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMTH10H015LPS 数据手册

DMTH10H015LPS

0.03

0.025

0.02

2.8

2.6

2.4

2.2

= 1mA

= 250µA

= 6.0V

= 20A

1.8

1.6

1.4

1.2

0.015

0.01

0.005

= 10V

= 20A

0.8

0.6

-50 -25

25 50

75 100 125 150 175

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (C)

Figure 7 On-Resistance Variation with Temperature

Figure 8 Gate Threshold Variation vs. Ambient Temperature

10000

f=1MHz

iss

1000

oss

= 175°C

100

rss

= 150°C

= 25°C

= 125°C

= 85°C

= -55°C

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

1000

100

DS(on)

Limited

= 1µs

= 100ms

= 10ms

= 1ms

= 50V

= 100µs

= 10A

= 10µs

T_J(max)= 175°C

T_C= 25°C

0.1

V_GS= 10V

Single Pulse

DUT on 1 * MRP Board

0.01

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

Q_g, TOTAL GATE CHARGE (nC)

Figure 11 Gate Charge

5 of 9

www.diodes.com

November 2023

DMTH10H015LPS

Document number: DS38713 Rev. 4 - 2

1 2 3 456 7 8 9

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